When the magnetic field is adjusted to 5 and 7 T (the blue and the green line), respectively, E7080 research buy the absolute value of the current continues to decrease at the same voltage conditions. It is noteworthy that from Figure 5a, we can clearly see that ΔI from 1 to 3 T is larger than that from 3 to 7 T where the voltage is −4 V. That is to say, the I-V of Ag2Te CP673451 sample is more sensitive at low magnetic field. This phenomenon reveals that the Ag2Te nanowires are suitable for low magnetic field sensor.

In addition, the magneto-resistance curves under different temperature conditions are illustrated in Figure 5b. The MR was calculated as MR = (ρ H  − ρ 0)/ρ 0. The MR (Δρ/ρ) increases when the magnetic field increases gradually. At each temperature, the curves for the sample

look very similar. But at T = 5 K, MR rises faster slightly than other higher temperature conditions. As shown in the black curve, the Δρ/ρ value is centered at 11.79% when the magnetic field is 4 T at a temperature of 300 K. When the temperature decreased at 5 K, keeping the same magnetic field find more of 4 T, the Δρ/ρ value increased to 38.35% (purple curves). These results experimentally suggest that the Δρ/ρ of Ag2Te NWs increased with the temperature decreasing gradually at the same magnetic field. Here, we also found a novel phenomenon that the magneto-resistance crosses over from a linear to a quadratic dependence on H (T) at the place of 4 T approximately. The Δρ/ρ shows a linear dependence on the low magnetic field (Figure 5b), but from the slope, we can notice that Δρ/ρ increases nonlinearly with increasing temperature at high H(T), which is different from the previous report [18, 19]. We deduced that this novel phenomenon was caused by the nanostructure of the sample. Figure 5 I-V characteristics of the Ag 2 Te nanowires

at room temperature and normalized magneto-resistance for Ag 2 Te nanowires. (a) I-V characteristics of the Ag2Te nanowires at room temperature under a series of magnetic field, B = 1, 3, 5, and 7 T; (b) the normalized magneto-resistance Δρ (T, H) / ρ (T, H) for Ag2Te nanowires as a function of magnetic field H at a series of temperatures T = 5, 10, 20, 40, LY294002 80, 160, and 300 K. Temperature-dependent MR of zero field (R 0) and field (R H ) resistivity is shown in Figure 6. The MR was calculated as MR = (R H − R 0) / R 0, and the sample behavior was measured in temperature from 300 to 4 K. It is noteworthy that the resistivity measured by the magnetic field of 9 T becomes larger with the increasing magnetic field, and the field resistivity curve is peaked with a strong maximum at 66 K exhibited by the red line. Then, the product exhibits a steep decline of the resistivity with increasing temperature as illustrated in the figure.