The fluorescence determination indicated that Ln-PSt/AA complexes could emit characteristic fluorescence with comparatively
high brightness and good monochromaticity, and the fluorescence intensity changed with increasing lanthanide ions content. (C) 2009 Wiley Periodicals, Inc. J Appl Polym Sci 114: 1064-1069, 2009″
“The carrier type reversal (CTR) from p- to n-type in semiconducting chalcogenide glasses is an important and a long standing problem in glass science. Ge-Se glasses Selleckchem INCB024360 exhibit CTR when the metallic elements Bi and Pb are added. For example, bulk Ge42-xSe58Pbx glasses exhibit CTR around 8-9 at. % of Pb. These glasses have been prepared by melt quenching method. Glass transition temperature (T-g), Specific heat change between the liquid and the glassy states (Delta C-p) at T-g and the nonreversing heat flow (Delta H-nr) measured by modulated differential scanning calorimetry exhibit anomalies at 9 at. % of Pb. These observed anomalies are interpreted on the basis of the nano scale phase separation occurring in these glasses.”
“Various waterborne interpenetrating polymer networks (IPNs) composed of polyurethaneurea selleck inhibitor (PUU) and graft vinyl ester resin were prepared from polyester polyol, dimethylolpropionic acid, isophorone diisocyanate, ethylenediamine and a well-defined graft vinyl ester resin containing
butanol side chains (BO-g-VER). These anionic IPN aqueous dispersions were stable at the ambient
temperature for >1 yr, and also had the excellent stability at low and high temperatures. The experimental results showed that the introduction of BO-g-VER network has not only greatly affected the learn more particle morphology, stability and rheological behavior of these aqueous dispersions, but also rendered the films with the augmented surface hydrophobicity as well as the excellent water-resistance performance and mechanical properties. A synergistic effect was observed at a certain BO-g-VER composition (20 wt %) to give significant reinforcement to the PUU, resulting from the compatibility and/or the interpenetration between the PUU network and the BO-g-VER network. (C) 2009 Wiley Periodicals, Inc. J Appl Polym Sci 114: 1070-1079, 2009″
“We report on a calibration-free dynamic carrier lifetime imaging technique yielding spatially resolved carrier lifetime maps of silicon wafers within data acquisition times of seconds. Our approach is based on infrared lifetime mapping (ILM), which exploits the proportionality between the measured infrared emission and the free carrier density. Dynamic ILM determines the lifetime analytically from the signal ratio of infrared camera images recorded directly after turning on an excitation source and after steady-state conditions are established within the sample.